Methods of patterning radiation , methods of forming radiation- patterning tools, and radiation-patterning tools

ABSTRACT

The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material. The subresolution assist feature alters a pattern of radiation intensity defined by the first material structure relative to a pattern that would be defined in the absence of the subresolution assist feature. The invention further includes methods of forming radiation-patterning tools, and the radiation-patterning tools themselves.

TECHNICAL FIELD

[0001] The invention pertains to methods of patterning radiation,methods of forming radiation-patterning tools, and toradiation-patterning tools themselves.

BACKGROUND OF THE INVENTION

[0002] Photolithography is commonly used during formation of integratedcircuits on semiconductor wafers. More specifically, a form of radiantenergy (such as, for example, ultraviolet light) is passed through aradiation-patterning tool and onto a semiconductor wafer. Theradiation-patterning tool can be, for example, a photomask or a reticle,with the term “photomask” being sometimes understood to refer to maskswhich define a pattern for an entirety of a wafer, and the term“reticle” being sometimes understood to refer to a patterning tool whichdefines a pattern for only a portion of a wafer. However, the terms“photomask” (or more generally “mask”) and “reticle” are frequently usedinterchangeably in modern parlance, so that either term can refer to aradiation-patterning tool that encompasses either a portion or anentirety of a wafer. For purposes of interpreting the claims thatfollow, the terms “photomask” and “reticle” will be given theirhistorical distinction such that the term “photomask” will refer to apatterning tool that defines a pattern for an entirety of a wafer, andthe term “reticle” will refer to a patterning tool that defines apattern for only a portion of a wafer.

[0003] Radiation-patterning tools contain light restrictive regions (forexample, totally opaque or attenuated/half-toned regions) and lighttransmissive regions (for example, totally transparent regions) formedin a desired pattern. A grating pattern, for example, can be used todefine parallel-spaced conductive lines on a semiconductor wafer. Thewafer is provided with a layer of photosensitive resist materialcommonly referred to as photoresist. Radiation passes through theradiation-patterning tool onto the layer of photoresist and transfersthe mask pattern to the photoresist. The photoresist is then developedto remove either the exposed portions of photoresist for a positivephotoresist or the unexposed portions of the photoresist for a negativephotoresist. The remaining patterned photoresist can then be used as amask on the wafer during a subsequent semiconductor fabrication step,such as, for example, ion implantation or etching relative to materialson the wafer proximate the photoresist.

[0004] Advances in semiconductor integrated circuit performance havetypically been accompanied by a simultaneous decrease in integratedcircuit device dimensions and a decrease in the dimensions of conductorelements which connect those integrated circuit devices. The demand forever smaller integrated circuit devices brings with it demands forever-decreasing dimensions of structural elements onradiation-patterning tools, and ever-increasing requirements forprecision and accuracy in radiation-patterning with the tools.

[0005] An exemplary prior art radiation-patterning tool 12 is shown inFIG. 1. Radiation-patterning tool 12 comprises a substrate 14 which isat least partially transparent to radiation which is to be patterned,and a structure 16 joined to substrate 14 and formed of a material whichis less transparent to the radiation than is substrate 14. Substrate 14typically comprises fused silica (for example, quartz), and structure 16typically comprises chrome.

[0006]FIG. 1 further illustrates radiation 18 being directed towardradiation-patterning tool 12, and shows a plot 20 of radiation intensityexiting from radiation-patterning tool 12. Plot 20 illustrates thatstructure 16 has attenuated the radiation intensity. Specifically, plot20 comprises a region 22 of decreased intensity where radiation 18 hasbeen at least partially blocked by structure 16, and higher intensityregions 24 where radiation 18 has not been blocked by structure 16. Inparticular embodiments of the prior art, structure 16 will comprise amaterial substantially opaque to radiation 18 (for example, chrome canbe opaque relative to ultraviolet light), and substrate 14 will besubstantially transparent to the radiation (for example, quartz can betransparent to ultraviolet light).

[0007] A problem associated with the radiation-patterning described withreference to FIG. 1 can be in accurately and reproducibly forming thedip in radiation intensity shown at region 22 of plot 20. Specifically,if radiation 18 is slightly defocused from an optimal focus position,the depth of region 22 (i.e., the change in intensity between region 22and regions 24) can be altered, which can cause variation in a criticaldimension of openings ultimately patterned into photoresist. Also, theshape of the intensity profile in graph 20 can be less precise than isdesired. Specifically, it would be ideal if the intensity profile ofplot 20 exactly mirrored the pattern defined by structure 16 (i.e., ifthe intensity profile had sharp corners at transitions between regions24 and 22, and if region 22 had a flat bottom with a width correspondingto that of structure 16).

[0008] An improved prior art radiation-patterning tool 12 a is describedwith reference to FIG. 2. In referring to FIG. 2, similar numbering isutilized as was used in referring to FIG. 1, with the suffix “a” used toindicate structures shown in FIG. 2. Radiation-patterning tool 12 a issimilar to the patterning tool 12 of FIG. 1 in that it comprises asubstrate 14 a which is at least partially transparent to incomingradiation 18 a, and a structure 16 a which is less transparent toradiation 18 a than the substrate. However, radiation-patterning tool 12a differs from the patterning tool 12 of FIG. 1 in that subresolutionassist features 30 are provided adjacent structure 16 a. Subresolutionassist features 30 are formed of an identical material as structure 16 a(which simplifies processing, as a single material can be formed oversubstrate 14 a and patterned to form features 30 and structures 16 a).Features 30 are referred to as subresolution assist features becauseintensity variations caused by features 30 are not resolved fromintensity variations caused by structures 16 a at the resolutionprovided by the particular wavelength of incoming radiation 18 a. Thisis shown in the intensity graph 20 a. Specifically, graph 20 a shows adip 22 a corresponding to a region wherein an intensity variation iscaused by structure 16 a, and shoulders 32 corresponding to regionswherein intensity variation is caused primarily by features 30. Sincethe intensity variations caused by features 30 are shoulders 32 alongregion 22 a, rather than distinctly resolved elements, such intensityvariations are subresolution variations.

[0009] Subresolution assist features 30 can alleviate some of theproblems described above as being associated with theradiation-patterning tool 12 of FIG. 1. Specifically, subresolutionassist features 30 can stabilize an intensity difference betweennon-blocked regions 24 a and blocked region 22 a relative to subtlevariations in focus of radiation 18 a. Further, subresolution assistfeatures 30 can improve the overall shape of blocked region 22 a in theintensity profile 20 a relative to the shape of region 22 in intensityprofile 20 of FIG. 1. Specifically, subresolution assist features 30 canflatten a bottom of region 22 a, and sharpen the transition at cornersof region 22 a, such that region 22 a has a width which betterapproximates a width of structure 16 a than the width of FIG. 1 region22 approximates a width of structure 16.

[0010] A problem associated with the formation of subresolution assistfeatures is that as the dimension of semiconductor devices becomessmaller the desired dimension of subresolution assist features alsobecomes smaller. It is therefore becoming increasingly difficult to formsatisfactory subresolution assist features as integrated circuit devicedimensions decrease. It would accordingly be desirable to developalternative methods of forming subresolution assist features.

SUMMARY OF THE INVENTION

[0011] In one aspect, the invention encompasses a method of patterningradiation. The radiation is simultaneously passed through a structureand at least one subresolution assist feature proximate the structure.The structure defines a pattern of radiation intensity. The at least onesubresolution assist feature comprises a material that is transmissiveof at least a portion of the radiation. The subresolution assist featurealters the pattern of radiation intensity defined by the structurerelative to a pattern of radiation intensity that would be defined inthe absence of the subresolution assist feature.

[0012] In another aspect, the invention encompasses another method ofpatterning radiation. The radiation is simultaneously passed through afirst material structure and at least one second material subresolutionassist feature proximate the first material structure. The secondmaterial is different than the first material. The subresolution assistfeature alters a pattern of radiation intensity defined by the firstmaterial structure relative to a pattern that would be defined in theabsence of the subresolution assist feature.

[0013] In other aspects, the invention encompasses methods of formingradiation-patterning tools, and the radiation-patterning toolsthemselves.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0015]FIG. 1 is a diagrammatic view of a prior art radiation-patterningtool, and an intensity profile of radiation passing through the tool.

[0016]FIG. 2 is a diagrammatic view of another prior artradiation-patterning tool, and an intensity profile of radiation passingthrough the tool.

[0017]FIG. 3 is a diagrammatic view of a radiation-patterning toolencompassed by the present invention.

[0018]FIG. 4 is a diagrammatic view of a construction shown at apreliminary step of a method of forming a radiation-patterning tool inaccordance with the present invention.

[0019]FIG. 5 is a view of the FIG. 4 construction shown at a processingstep subsequent to that of FIG. 4.

[0020]FIG. 6 is a view of the FIG. 4 construction shown at a processingstep subsequent to that of FIG. 5.

[0021]FIG. 7 is a view of the FIG. 6 construction shown with radiationpassing through the construction in accordance with a preferred aspectof the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0023] A radiation-patterning tool 50 encompassed by the presentinvention is shown in FIG. 3. Patterning tool 50 comprises a substrate52 and a structure 54 joined with the substrate (structure 54 is on thesubstrate in the shown embodiment, but it is to be understood that theinvention encompasses other embodiments (not shown), wherein structure54 is spaced from the substrate by one or more intervening materials).Substrate 52 can comprise constructions identical to those of prior artsubstrate 14 a of FIG. 2, and accordingly can comprise, for example,fused silica. Structure 54 can comprise constructions identical tostructures 16 a of FIG. 2, and accordingly can comprise, for example,chromium.

[0024] Radiation-patterning tool 50 comprises subresolution assistfeatures 56 and 58 proximate structure 54. In the shown embodiment, twosubresolution assist features are provided. It is to be understood,however, that only one subresolution assist feature could be provided,or that more than two subresolution assist features could be provided.In one aspect of the invention, subresolution assist features 56 and 58preferably comprise a different material than structure 54. Accordingly,structure 54 comprises a first material, and subresolution assistfeatures 56 and 58 comprise a second material. The material utilized insubresolution assist features 56 and 58 is preferably transmissive forat least some of the radiation patterned by radiation-patterning tool50.

[0025] Similarly to the prior art construction described with referenceto FIG. 2, substrate 52 comprises a material which is transmissive to awavelength of radiation which is to be patterned, and structure 54comprises a material which is less transmissive to the wavelength ofradiation than is substrate 52. Accordingly, structure 54 defines apattern of radiation intensity for the wavelength of radiation after theradiation is passed through patterning tool 50. In an aspect of theinvention, subresolution assist features 56 and 58 can be formed of amaterial which is less transmissive of the wavelength of radiation thansubstrate 52, but more transmissive of the wavelength of radiation thanthe material of structure 54. Accordingly, subresolution assist features56 and 58 are partially transmissive to the wavelength of radiation. Itis found that such partial transmission of a wavelength of radiation canenable subresolution assist features of a given size to performcomparably to opaque subresolution assist features of a smaller size.Accordingly, whereas the prior art radiation-patterning tool 12 a ofFIG. 2 utilized subresolution assist features (30) formed of the samematerial as an interposed structure (16 a), and accordingly utilizedsubresolution assist features having the same level of opaqueness to anincoming radiation (18 a), such subresolution assist features wouldideally be formed to a given maximal dimension for a particularwavelength of radiation, and a particular size of structure 54. Incontrast, since subresolution assist features 56 and 58 ofradiation-patterning tool 50 are more transmissive of radiation thanstructure 54, subresolution assist features 56 and 58 can be formed to alarger maximal dimension than could prior art subresolution assistfeatures 30. This can simplify formation of resolution assist features56 and 58 relative to the formation of prior art subresolution assistfeatures 30.

[0026] It is emphasized that subresolution assist features 56 and 58 canbe formed of materials which are at least partially transmissive toradiation passed through patterning tool 50 and utilized to patternphotoresist. This is in contrast to the prior art resolution assistfeatures that were formed of materials opaque to radiation passedthrough a patterning tool. Of course, it is preferred that subresolutionassist features 56 and 58 be only partially transmissive to radiationpassed through patterning tool 50, rather than completely transmissive,as subresolution assist features 56 and 58 will preferably modify apattern of radiation intensity defined by structure 54 relative to apattern of radiation intensity that would be defined in the absence ofthe subresolution assist features. A preferred transmissivity of thematerial utilized in subresolution assist features 56 and 58 is fromabout 5% to about 20% of the radiation passed through tool 50 that has asuitable wavelength to pattern photoresist. For instance, if theradiation passed through tool 50 having a suitable wavelength to patternphotoresist is ultraviolet light radiation, subresolution assistfeatures 56 and 58 will preferably transmit from about 5% to about 20%of said light.

[0027] Preferred materials for subresolution assist features 56 and 58are materials comprising molybdenum and silicon (such as, for example,MoSi_(x)N_(y)O_(z), wherein x, y and z are greater than zero), andmaterials comprising or consisting essentially of silicon carbide. It isnoted that since subresolution assist features 56 and 58 are preferablyat least partially transmissive of radiation passed through tool 50, thesubresolution assist features preferably do not comprise chromium inapplications in which ultraviolet light is to be passed through tool 50and utilized for patterning photoresist.

[0028] In the shown embodiment, features 56 and 58 have a thickness “x”and structure 54 has a thickness “y” which is different than “x”. It isnoted that prior art constructions have subresolution features withthicknesses identical to the thickness of an interposed structure, asthe subresolution features and interposed structure are formed from thesame materials. In contrast, constructions of the present invention canhave subresolution assist features with different thicknesses than aninterposed structure. Further, although subresolution assist features 56and 58 are shown having the same thickness (“x”), it is to be understoodthat subresolution assist features 56 and 58 can have thicknessesdifferent from one another, and can comprise materials different fromone another.

[0029] FIGS. 4-6 describe a method of forming tool 50. Referringinitially to FIG. 4, tool 50 is shown at a preliminary step of themethod. Tool 50 comprises substrate 52, and materials 70, 72 and 74 oversubstrate 52. Material 72 will ultimately be patterned to form structure54, and materials 70 and 74 will ultimately be patterned to formsubresolution assist features 56 and 58. Accordingly, materials 70 and74 are preferably different from material 72, and can be different thanone another.

[0030] Referring to FIG. 5, materials 70, 72 and 74 (FIG. 4) arepatterned to form subresolution assist feature 56, structure 54, andsubresolution assist feature 58, respectively. Such patterning can beaccomplished by, for example, conventional reticle patterning (such as,for example, formation of photoresist over materials 70, 72 and 74,followed by electron beam or laser etching to pattern the photoresist,and then etching of materials 70, 72 and 74 with subsequent removal ofthe photoresist). Although in the shown embodiment materials 70, 72 and74 are patterned together (i.e., with a common electron beam or laseretch), it is to be understood that the invention encompasses otherembodiments (not shown) wherein the materials are provided and patternedsequentially relative to one another. Common patterning of the materialscan, however, be preferred, as such will utilize only one electron beamor laser etch, whereas sequential patterning can utilize multipleelectron beam or laser etches. Also, it is noted that in the shownembodiment materials 70, 72 and 74 are formed to different thicknessesover substrate 52. It is to be understood that the invention encompassesother embodiments wherein materials 70, 72 and 74 are formed to a commonthickness over substrate 52. Such other embodiments can comprise, forexample, chemical-mechanical polishing of materials 70, 72 and 74 toform a planarized upper surface of such materials.

[0031]FIG. 5 shows substrate 52 having a thickness T₁. Such thicknesscan influence the effectiveness with which patterning tool 50 patternsradiation. Specifically, a ratio of the substrate thickness (T₁)relative to a subresolution assist feature thickness (x) defines achange in phase of radiation passing through both substrate 52 and thesubresolution assist feature. Preferably, such change in phase is aninteger multiple of 360° relative to a change in phase that occurs inradiation passing through both substrate 52 and structure 54. Suchpreferable condition can be accomplished by one or both of adjusting athickness of a subresolution assist feature and adjusting a thickness ofsubstrate 52. FIG. 6 illustrates tool 50 after the thickness ofsubstrate 52 has been reduced to a thickness T₂. Although substantiallyan entirety of the substrate 14 is shown reduced in thickness in FIG. 6(actually, an entirety of the shown substrate fragment is reduced inthickness), it is to be understood that the invention encompasses otherembodiments (not shown) wherein the portions of the substrate underlyingfeatures 56 and 58 are treated selectively relative other portions ofthe substrate. For instance a thickness of portions of the substrateunderlying features 56 and 58 can be reduced relative to a thickness ofthe portion of the substrate underlying structure 54. Alternatively, athickness of the portion of the substrate underlying structure 54 can bereduced relative to a thickness of the portions of the substrateunderlying features 56 and 58.

[0032]FIG. 7 illustrates a preferred configuration wherein radiation 80enters substrate 52 in phase and exits subresolution features 56 and 58,and structure 54, in phase.

[0033] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of patterning radiation comprising simultaneously passingthe radiation through a structure and at least one subresolution assistfeature proximate the structure; the structure defining a pattern ofradiation intensity; the at least one subresolution assist featurecomprising a material that is transmissive of at least a portion of theradiation and altering the pattern of radiation intensity relative to apattern of radiation intensity that would be defined by the structure inthe absence of the subresolution assist feature.
 2. The method of claim1 wherein the radiation comprises light having a suitable wavelength topattern photoresist, and wherein the subresolution assist feature istransmissive of from about 5% to about 20% of said light.
 3. The methodof claim 1 further comprising forming the structure and the at least onesubresolution assist feature over a substrate; wherein the substrate hasa first thickness and the subresolution assist feature has secondthickness; wherein the ratio of the first thickness to the secondthickness defines a change in phase of radiation passing through thesubstrate and subresolution assist feature relative to radiation passingthrough the substrate and structure; said change in phase being about aninteger multiple of 360°.
 4. The method of claim 3 wherein the substratecomprises fused silicon and the subresolution assist feature comprisesmolybdenum and silicon.
 5. The method of claim 3 wherein the substratecomprises fused silicon, the structure comprises chromium, and thesubresolution assist feature comprises molybdenum and silicon.
 6. Themethod of claim 3 wherein the substrate comprises fused silicon and thesubresolution assist feature comprises silicon carbide.
 7. The method ofclaim 3 wherein the substrate comprises fused silicon, the structurecomprises chromium, and the subresolution assist feature comprisessilicon carbide.
 8. The method of claim 1 wherein the subresolutionassist feature comprises molybdenum and silicon.
 9. The method of claim1 wherein the subresolution assist feature comprises silicon carbide.10. A method of patterning radiation comprising simultaneously passingthe radiation through a first material structure and at least one secondmaterial subresolution assist feature proximate the first materialstructure; the first material structure defining a pattern of radiationintensity; the second material being different than the first materialand altering the pattern of radiation intensity relative to a pattern ofradiation intensity that would be defined by the first materialstructure in the absence of the subresolution assist feature.
 11. Themethod of claim 10 wherein the radiation comprises light having asuitable wavelength to pattern photoresist, and wherein thesubresolution assist feature is transmissive of from about 5% to about20% of said light.
 12. The method of claim 10 further comprising formingthe first material structure and the at least one second materialsubresolution assist feature over a substrate; wherein the substrate hasa first thickness and the subresolution assist feature has secondthickness; wherein the ratio of the first thickness to the secondthickness defines a change in phase of radiation passing through thesubstrate and subresolution assist feature relative to radiation passingthrough the substrate and first material structure; said change in phasebeing about an integer multiple of 360°.
 13. The method of claim 12wherein the substrate comprises fused silicon, the first materialstructure comprises chromium and the second material subresolutionassist feature comprises molybdenum and silicon.
 14. The method of claim12 wherein the substrate comprises fused silicon and the second materialsubresolution assist feature comprises molybdenum and silicon.
 15. Themethod of claim 12 wherein the substrate comprises fused silicon, thefirst material structure comprises chromium, and the second materialsubresolution assist feature comprises silicon carbide.
 16. The methodof claim 12 wherein the substrate comprises fused silicon and the secondmaterial subresolution assist feature comprises silicon carbide.
 17. Themethod of claim 10 wherein the second material comprises molybdenum andsilicon.
 18. The method of claim 10 wherein the second materialcomprises silicon carbide.
 19. The method of claim 10 wherein the firstmaterial comprises chromium.
 20. The method of claim 10 wherein thefirst material comprises chromium and the second material does notcomprise chromium.
 21. The method of claim 10 wherein the first materialcomprises chromium and the second material comprises molybdenum andsilicon.
 22. The method of claim 10 wherein the first material compriseschromium and the second material comprises silicon carbide.
 23. A methodof forming a radiation-patterning tool, comprising: forming a structureover a substrate, the structure being configured to attenuate a portionof radiation passing through the substrate to define a pattern ofradiation intensity; and forming at least one subresolution assistfeature proximate the structure to modify the pattern of radiationintensity, the subresolution assist feature comprising a material thatis transmissive of at least a portion of the radiation.
 24. The methodof claim 23 wherein the substrate has a first thickness and thesubresolution assist feature has second thickness; wherein the ratio ofthe first thickness to the second thickness defines a change in phase ofradiation passing through the substrate and subresolution assist featurerelative to radiation passing through the substrate and structure; saidchange in phase being about an integer multiple of 360°.
 25. The methodof claim 24 wherein the substrate initially has a thickness greater thanthe first thickness, and comprising reducing the thickness ofsubstantially an entirety of the substrate to the first thickness. 26.The method of claim 24 wherein the substrate initially has a thicknessgreater than the first thickness; wherein the at least one subresolutionfeature is formed over at least one portion of the substrate; andcomprising reducing the thickness of the at least one portion of thesubstrate underlying the subresolution feature to the first thickness.27. The method of claim 24 wherein the substrate comprises fused siliconand the subresolution assist feature comprises molybdenum and silicon.28. The method of claim 24 wherein the substrate comprises fused siliconand the subresolution assist feature comprises silicon carbide.
 29. Themethod of claim 23 wherein the subresolution assist feature comprisesmolybdenum and silicon.
 30. The method of claim 23 wherein thesubresolution assist feature comprises silicon carbide.
 31. A method offorming a radiation-patterning tool, comprising: forming a firstmaterial structure over a substrate, the first material structure beingconfigured to attenuate a portion of radiation passing through thesubstrate to define a pattern of radiation intensity; and forming atleast one second material subresolution assist feature joined to thesubstrate and proximate the first material structure, the secondmaterial being different than the first material and attenuating theradiation differently than the first material to modify the pattern ofradiation intensity.
 32. The method of claim 31 wherein the substratehas a first thickness and the subresolution assist feature has secondthickness; wherein the ratio of the first thickness to the secondthickness defines a change in phase of radiation passing through thesubstrate and subresolution assist feature relative to radiation passingthrough the substrate and first material structure; said change in phasebeing about an integer multiple of 360°.
 33. The method of claim 32wherein the substrate initially has a thickness greater than the firstthickness, and comprising reducing the thickness of substantially anentirety of the substrate to the first thickness.
 34. The method ofclaim 32 wherein the substrate initially has a thickness greater thanthe first thickness; wherein the at least one subresolution feature isformed over at least one portion of the substrate; and comprisingreducing the thickness of the at least one portion of the substrateunderlying the subresolution feature to the first thickness.
 35. Themethod of claim 31 wherein the substrate comprises fused silicon and thesubresolution assist feature comprises molybdenum and silicon.
 36. Themethod of claim 31 wherein the substrate comprises fused silicon, thefirst material structure comprises chromium, and the subresolutionassist feature comprises molybdenum and silicon.
 37. The method of claim32 wherein the substrate comprises fused silicon, the first materialstructure comprises chromium, and the subresolution assist featurecomprises silicon carbide.
 38. The method of claim 31 wherein the secondmaterial comprises molybdenum and silicon.
 39. The method of claim 31wherein the second material comprises silicon carbide.
 40. The method ofclaim 31 wherein the first material comprises chromium.
 41. The methodof claim 31 wherein the first material comprises chromium and the secondmaterial does not comprise chromium.
 42. The method of claim 31 whereinthe first material comprises chromium and the second material comprisesmolybdenum and silicon.
 43. The method of claim 31 wherein the firstmaterial comprises chromium and the second material comprises siliconcarbide.
 44. A radiation-patterning tool, comprising: a substrate thatis at least partially transparent to the radiation; a structure joinedto the substrate, the structure being configured to attenuate a portionof radiation passing through the substrate to define a pattern ofradiation intensity; and at least one subresolution assist featurejoined to the substrate and proximate the structure, the subresolutionassist feature comprising a material that is transmissive of at least aportion of the radiation and modifying the pattern of radiationintensity defined by the structure.
 45. The tool of claim 44 wherein thestructure is opaque to the radiation.
 46. The tool of claim 44comprising a pair of the subresolution assist features and having thestructure interposed between the features.
 47. The tool of claim 46wherein the individual subresolution assist features of the pair ofsubresolution assist features have a first thickness and a secondthickness, respectively, and wherein the structure has a thirdthickness; at least one of the first and second thicknesses beingdifferent than the third thickness.
 48. The tool of claim 47 whereinboth of the first and second thicknesses are different than the thirdthickness.
 49. The tool of claim 47 wherein both of the first and secondthicknesses are different than the third thickness, and wherein thefirst and second thicknesses are about equal.
 50. The tool of claim 46wherein the individual subresolution assist features of the pair ofsubresolution assist features are the same composition as one another.51. The tool of claim 46 wherein the individual subresolution assistfeatures of the pair of resolution assist features differ in compositionfrom one another.
 52. The tool of claim 44 wherein the subresolutionassist feature and a portion of the substrate proximate thesubresolution feature together change a phase of radiation passingthrough the portion of the substrate and the subresolution assistfeature relative to radiation passing through another portion of thesubstrate and the structure; said change in phase being about an integermultiple of 360°.
 53. The tool of claim 52 wherein the substrate isfused silicon and the subresolution assist feature is molybdenum andsilicon.
 54. The tool of claim 52 wherein the substrate is fused siliconand the subresolution assist feature is silicon carbide.
 55. The tool ofclaim 44 wherein the subresolution assist feature comprises molybdenumand silicon.
 56. The tool of claim 44 wherein the subresolution assistfeature comprises silicon carbide.
 57. The tool of claim 44 wherein thesubstrate is a fused silicon reticle.
 58. The tool of claim 44 whereinthe substrate is a fused silicon photomask.
 59. A radiation-patterningtool, comprising: a substrate that is at least partially transparent tothe radiation; a first material structure joined to the substrate, thefirst material being less transparent to the radiation than thesubstrate, the first material structure being configured to attenuate aportion of radiation passing through the substrate to define a patternof radiation intensity; and at least one second material joined to thesubstrate and proximate the first material structure, the secondmaterial being different than the first material and attenuating theradiation differently than the first material, the second materialstructure defining a subresolution assist feature that modifies thepattern of radiation intensity defined by the first material structure.60. The tool of claim 59 wherein the first material structure is opaqueto the radiation.
 61. The tool of claim 59 wherein the subresolutionassist feature and a portion of the substrate proximate thesubresolution feature together change a phase of radiation passingthrough the portion of the substrate and the subresolution assistfeature relative to radiation passing through another portion of thesubstrate and the first material structure; said change in phase beingabout an integer multiple of 360°.
 62. The tool of claim 61 wherein thesubstrate is fused silicon and the subresolution assist feature issilicon carbide.
 63. The tool of claim 59 wherein the second materialcomprises molybdenum and silicon.
 64. The tool of claim 59 wherein thesecond material comprises silicon carbide.
 65. The tool of claim 59wherein the first material comprises chromium.
 66. The tool of claim 59wherein the first material comprises chromium and the second materialdoes not comprise chromium.
 67. The tool of claim 59 wherein the firstmaterial comprises chromium and the second material comprises molybdenumand silicon.
 68. The tool of claim 59 wherein the first materialcomprises chromium and the second material comprises silicon carbide.